vishay tlc.52.. document number 83210 rev. 5, 08-apr-03 vishay semiconductors www.vishay.com 1 94 8631 high intensity led, ? 5 mm 30 untinted non-diffused \ description the tlc.52.. series is a clear, non diffused 5 mm led for high end applications where supreme luminous intensity required. these lamps with clear untinted plastic case utilize the highly developed ultrabright alingap and ingan technologies. the lens and the viewing angle is optimized to achieve best performance of light output and visibility. features ? untinted non diffused lens utilizing ultrabright allngap and ingan technology high luminous intensity high operating temperature: t j (chip junction temperature) up to 125 c for allngap devices luminous intensity and color categorized for each packing unit esd-withstand voltage: 2 kv acc. to mil std 883 d, method 3015.7 for allngap, 1 kv for ingan applications interior and exterior lighting outdoor led panels instrumentation and front panel indicators central high mounted stop lights (chmsl) for motor vehicles replaces incandescent lamps traffic signals light guide design parts table part color, luminous intensity angle of half intensity ( ? ) te c h n o l o gy tlcr5200 red, i v > 1350 mcd 15 allngap on gaas tlcy5200 ye l l o w, i v > 1350 mcd 15 allngap on gaas tlctg5200 true green, i v > 750 mcd 15 ingan on sic tlcb5200 blue, i v > 240 mcd 15 ingan on sic
www.vishay.com 2 document number 83210 rev. 5, 08-apr-03 vishay tlc.52.. vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified tlcr5200 , tlcy5200 tlctg5200 , tlcb5200 optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlcr5200 1) in one packing unit i vmax. /i vmin. 2.0 parameter test condition symbol value unit reverse voltage v r 5 v dc forward current t amb 85 c i f 50 ma surge forward current t p 10 s i fsm 1 a power dissipation t amb 85 c p v 135 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ ambient r thja 300 k/w parameter test condition symbol value unit reverse voltage v r 5 v dc forward current t amb 60 c i f 30 ma surge forward current t p 10 s i fsm 0.1 a power dissipation t amb 60c p v 135 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ ambient r thja 300 k/w parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 50 ma tlcr5200 i v 1350 4000 mcd dominant wavelength i f = 50 ma d 611 616 622 nm peak wavelength i f = 50 ma p 622 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 18 nm angle of half intensity i f = 50 ma ? 15 deg forward voltage i f = 50 ma v f 2.1 2.7 v reverse voltage i r = 10 a v r 5 v temperature coefficient of v f i f = 50 ma tc vf - 3.5 mv/k temperature coefficient of d i f = 50 ma tc d 0.05 nm/k
vishay tlc.52.. document number 83210 rev. 5, 08-apr-03 vishay semiconductors www.vishay.com 3 yellow tlcy5200 1) in one packing unit i vmax. /i vmin. 2.0 true green tlctg5200 1) in one packing unit i vmax. /i vmin. 2.0 optical and electrical characteristics t amb = 25 c, unless otherwise specified blue tlcb5200 1) in one packing unit i vmax. /i vmin. 2.0 parameter tes t co nd iti on part symbol min ty p. max unit luminous intensity 1) i f = 50 ma tlcy5200 i v 1350 4000 mcd dominant wavelength i f = 50 ma d 585 590 597 nm peak wavelength i f = 50 ma p 593 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 17 nm angle of half intensity i f = 50 ma ? 15 deg forward voltage i f = 50 ma v f 2.1 2.7 v reverse voltage i r = 10 a v r 5 v temperature coefficient of v f i f = 50 ma tc vf - 3.5 mv/k temperature coefficient of d i f = 50 ma tc d 0.1 nm/k parameter tes t co nd iti on part symbol min ty p. max unit luminous intensity 1) i f = 30 ma tlctg5200 i v 750 2000 mcd dominant wavelength i f = 30 ma d 515 525 535 nm peak wavelength i f = 30 ma p 520 nm spectral bandwidth at 50 % i rel max i f = 30 ma ? 37 nm angle of half intensity i f = 30 ma ? 15 deg forward voltage i f = 30 ma v f 3.9 4.5 v reverse voltage i r = 10 a v r 5 v temperature coefficient of v f i f = 30 ma tc vf - 4.5 mv/k temperature coefficient of d i f = 30 ma tc d 0.02 nm/k parameter tes t co nd iti on part symbol min ty p. max unit luminous intensity 1) i f = 30 ma tlcb5200 i v 240 700 mcd dominant wavelength i f = 30 ma d 462 470 476 nm peak wavelength i f = 30 ma p 464 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 25 nm angle of half intensity i f = 30 ma ? 15 deg forward voltage i f = 30 ma v f 3.9 4.5 v reverse voltage i r = 10 a v r 5 v temperature coefficient of v f i f = 30 ma tc vf - 5.0 mv/k temperature coefficient of d i f = 30 ma tc d 0.02 nm/k
www.vishay.com 4 document number 83210 rev. 5, 08-apr-03 vishay tlc.52.. vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. power dissipation vs. ambient temperature figure 3. forward current vs. ambient temperature 0 20 40 60 80 100 120 140 160 0 20406080100120 t amb ? ambient temperature ( c) 16708 p ?power dissipation (mw) v yellow red 0 20 40 60 80 100 120 140 160 0 102030405060708090100 t amb ? ambient temperature ( c ) 16709 p ?power dissipation (mw) v blue truegreen 0 10 20 30 40 50 60 0 20406080100120 t amb ? ambient temperature ( c ) 16710 yellow red i ?forward current ( ma ) f figure 4. forward current vs. ambient temperature figure 5. rel. luminous intensity vs. angular displacement figure 6. forward current vs. forward voltage 0 10 20 30 40 50 60 0 102030405060708090100 t amb ? ambient temperature ( c ) 16711 blue truegreen i ?forward current ( ma ) f 17534 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 q 30 q 10 q 20 q 40 q 50 q 60 q 70 q 80 q 1.0 0.8 0.7 i ? relative luminous intensity v rel 0 10 20 30 40 50 60 70 80 90 100 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 v f ? forward voltag e(v) 15974 f i ?f orward current ( ma ) red yellow
vishay tlc.52.. document number 83210 rev. 5, 08-apr-03 vishay semiconductors www.vishay.com 5 figure 7. forward current vs. forward voltage figure 8. relative luminous flux vs. forward current figure 9. relative luminous flux vs. forward current 0 10 20 30 40 50 60 70 80 90 100 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v f ? forward voltage ( v ) 16040 f i ? forward current ( ma ) blue truegreen 0.01 0.10 1.00 10.00 1 10 100 i f ? forward current ( ma ) 15978 i ? relative luminous intensity vrel red v rel 0.01 0.10 1.00 10.00 1 10 100 i f - forward current ( ma ) 15979 yellow i - relative luminous intensity figure 10. relative luminous flux vs. forward current figure 11. relative luminous flux vs. forward current figure 12. relative intensity vs. wavelength 0.01 0.10 1.00 10.00 1 10 100 i f ? forward current ( ma ) 16039 true green vrel i ? relative luminous intensity 0.01 0.10 1.00 10.00 1 10 100 i f ? forward current ( ma ) 16042 blue vrel i ? relative luminous intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 570 580 590 600 610 620 630 640 650 660 670 ? wavelength ( nm ) 16007 i ? relative luminous intensity vrel i f = 50 ma red
www.vishay.com 6 document number 83210 rev. 5, 08-apr-03 vishay tlc.52.. vishay semiconductors figure 13. relative intensity vs. wavelength figure 14. relative intensity vs. wavelength figure 15. relative intensity vs. wavelength 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 540 550 560 570 580 590 600 610 620 630 640 ? wavelength ( nm ) 16008 i ? relative luminous intensity vrel i f = 50 ma yellow 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 460 480 500 520 540 560 580 600 620 ? wavelength ( nm ) 16068 i ? relative luminous intensity vrel i f = 30 ma true green 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 400 420 440 460 480 500 520 540 560 ? wavelength ( nm ) 17539 i f = 30 ma blue i ? relative intensity rel
vishay tlc.52.. document number 83210 rev. 5, 08-apr-03 vishay semiconductors www.vishay.com 7 package dimensions in mm 14339
www.vishay.com 8 document number 83210 rev. 5, 08-apr-03 vishay tlc.52.. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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